IndiumV3, Main, Repository, bibRecord, 000059

Physical and chemical degradation behavior of sputtered aluminum doped zinc oxide layers for Cu(In,Ga)Se2 solar cells

Identifieur interne : 000059 ( Main/Repository ); précédent : 000058; suivant : 000060

Physical and chemical degradation behavior of sputtered aluminum doped zinc oxide layers for Cu(In,Ga)Se2 solar cells

Auteurs : RBID : Pascal:14-0084496

Descripteurs français

Pascal (Inist)
- Dépôt pulvérisation, Addition zinc, Couche oxyde, Cellule solaire, Verre borosilicate, Humidité, Effet Hall, Densité porteur charge, Mobilité Hall, Conductivité électrique, Barrière potentiel, Joint grain, Défaut cristallin, Charge espace, Piégeage porteur charge, Diffraction RX, Structure cristalline, Silicium, Carbone, Chlore, Profil profondeur, Diffusion(transport), Adsorption, Chlorure, Sulfure, Cuivre, Indium, Gallium, Séléniure, Zinc, Hydroxyde, Al2O3, ZnO, Substrat Aluminium, Substrat verre, 8115C, 8460J, 7350J, 7361.
Wicri :
- concept : Carbone, Chlore, Cuivre, Zinc.

English descriptors

KwdEn :
- Adsorption, Borosilicate glass, Carbon, Carrier density, Charge carrier trapping, Chlorides, Chlorine, Copper, Crystal defects, Crystal structure, Depth profiles, Diffusion, Electrical conductivity, Gallium, Grain boundaries, Hall effect, Hall mobility, Humidity, Hydroxides, Indium, Oxide layer, Potential barrier, Selenides, Silicon, Solar cells, Space charge, Sputter deposition, Sulfides, XRD, Zinc, Zinc additions.

Abstract

Sputtered aluminum doped zinc oxide (ZnO:Al) layers on borosilicate glass were exposed to damp heat (85 °C/85% relative humidity) for 2876 h to accelerate the physical and chemical degradation behavior. The ZnO:Al samples were characterized by electrical, compositional and optical measurements before and after degradation. Hall measurements show that the carrier concentration stayed constant, while the Hall mobility decreased and the overall resistivity thus increased. This can be explained by the increase of potential barriers at the grain boundaries due to the occurrence of space charge regions caused by additional electron trapping sites. X-Ray Diffraction and optical measurements show that the crystal structure and transmission in the range 300-1100 nm do no change, hereby confirming that the bulk structure stays constant. Furthermore, on the surface, white spots appeared, containing elements that migrated from the glass, like silicon and calcium, which reacted with elements from the environment, including oxygen, carbon and chlorine. Depth profiling showed that the increase of the potential barrier is caused by the diffusion of H₂O/OH^- through the grain boundaries leading to the formation of Zn(OH)₂ or similar species or adsorption of species. They also indicate the presence of chloride and sulfide in the top layer and the possible presence of Zn₅(OH)₈Cl₂.H₂O and Zn₄SO₄(OH)₆.nH₂O.

Links toward previous steps (curation, corpus...)

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Pascal:14-0084496

Le document en format XML

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<author><name sortKey="Zeman, Miro" uniqKey="Zeman M">Miro Zeman</name>
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<s3>NLD</s3>
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<date when="2014">2014</date>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Adsorption</term>
<term>Borosilicate glass</term>
<term>Carbon</term>
<term>Carrier density</term>
<term>Charge carrier trapping</term>
<term>Chlorides</term>
<term>Chlorine</term>
<term>Copper</term>
<term>Crystal defects</term>
<term>Crystal structure</term>
<term>Depth profiles</term>
<term>Diffusion</term>
<term>Electrical conductivity</term>
<term>Gallium</term>
<term>Grain boundaries</term>
<term>Hall effect</term>
<term>Hall mobility</term>
<term>Humidity</term>
<term>Hydroxides</term>
<term>Indium</term>
<term>Oxide layer</term>
<term>Potential barrier</term>
<term>Selenides</term>
<term>Silicon</term>
<term>Solar cells</term>
<term>Space charge</term>
<term>Sputter deposition</term>
<term>Sulfides</term>
<term>XRD</term>
<term>Zinc</term>
<term>Zinc additions</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Dépôt pulvérisation</term>
<term>Addition zinc</term>
<term>Couche oxyde</term>
<term>Cellule solaire</term>
<term>Verre borosilicate</term>
<term>Humidité</term>
<term>Effet Hall</term>
<term>Densité porteur charge</term>
<term>Mobilité Hall</term>
<term>Conductivité électrique</term>
<term>Barrière potentiel</term>
<term>Joint grain</term>
<term>Défaut cristallin</term>
<term>Charge espace</term>
<term>Piégeage porteur charge</term>
<term>Diffraction RX</term>
<term>Structure cristalline</term>
<term>Silicium</term>
<term>Carbone</term>
<term>Chlore</term>
<term>Profil profondeur</term>
<term>Diffusion(transport)</term>
<term>Adsorption</term>
<term>Chlorure</term>
<term>Sulfure</term>
<term>Cuivre</term>
<term>Indium</term>
<term>Gallium</term>
<term>Séléniure</term>
<term>Zinc</term>
<term>Hydroxyde</term>
<term>Al2O3</term>
<term>ZnO</term>
<term>Substrat Aluminium</term>
<term>Substrat verre</term>
<term>8115C</term>
<term>8460J</term>
<term>7350J</term>
<term>7361</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Carbone</term>
<term>Chlore</term>
<term>Cuivre</term>
<term>Zinc</term>
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<front><div type="abstract" xml:lang="en">Sputtered aluminum doped zinc oxide (ZnO:Al) layers on borosilicate glass were exposed to damp heat (85 °C/85% relative humidity) for 2876 h to accelerate the physical and chemical degradation behavior. The ZnO:Al samples were characterized by electrical, compositional and optical measurements before and after degradation. Hall measurements show that the carrier concentration stayed constant, while the Hall mobility decreased and the overall resistivity thus increased. This can be explained by the increase of potential barriers at the grain boundaries due to the occurrence of space charge regions caused by additional electron trapping sites. X-Ray Diffraction and optical measurements show that the crystal structure and transmission in the range 300-1100 nm do no change, hereby confirming that the bulk structure stays constant. Furthermore, on the surface, white spots appeared, containing elements that migrated from the glass, like silicon and calcium, which reacted with elements from the environment, including oxygen, carbon and chlorine. Depth profiling showed that the increase of the potential barrier is caused by the diffusion of H<sub>2</sub>
O/OH<sup>-</sup>
 through the grain boundaries leading to the formation of Zn(OH)<sub>2</sub>
 or similar species or adsorption of species. They also indicate the presence of chloride and sulfide in the top layer and the possible presence of Zn<sub>5</sub>
(OH)<sub>8</sub>
Cl<sub>2</sub>
.H<sub>2</sub>
O and Zn<sub>4</sub>
SO<sub>4</sub>
(OH)<sub>6</sub>
.nH<sub>2</sub>
O.</div>
</front>
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 solar cells</s1>
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<fC01 i1="01" l="ENG"><s0>Sputtered aluminum doped zinc oxide (ZnO:Al) layers on borosilicate glass were exposed to damp heat (85 °C/85% relative humidity) for 2876 h to accelerate the physical and chemical degradation behavior. The ZnO:Al samples were characterized by electrical, compositional and optical measurements before and after degradation. Hall measurements show that the carrier concentration stayed constant, while the Hall mobility decreased and the overall resistivity thus increased. This can be explained by the increase of potential barriers at the grain boundaries due to the occurrence of space charge regions caused by additional electron trapping sites. X-Ray Diffraction and optical measurements show that the crystal structure and transmission in the range 300-1100 nm do no change, hereby confirming that the bulk structure stays constant. Furthermore, on the surface, white spots appeared, containing elements that migrated from the glass, like silicon and calcium, which reacted with elements from the environment, including oxygen, carbon and chlorine. Depth profiling showed that the increase of the potential barrier is caused by the diffusion of H<sub>2</sub>
O/OH<sup>-</sup>
 through the grain boundaries leading to the formation of Zn(OH)<sub>2</sub>
 or similar species or adsorption of species. They also indicate the presence of chloride and sulfide in the top layer and the possible presence of Zn<sub>5</sub>
(OH)<sub>8</sub>
Cl<sub>2</sub>
.H<sub>2</sub>
O and Zn<sub>4</sub>
SO<sub>4</sub>
(OH)<sub>6</sub>
.nH<sub>2</sub>
O.</s0>
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<s5>01</s5>
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<s5>01</s5>
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<s5>02</s5>
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<s5>02</s5>
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<s5>03</s5>
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<s5>03</s5>
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<s5>04</s5>
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<s5>04</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>06</s5>
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<fC03 i1="06" i2="3" l="ENG"><s0>Humidity</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Effet Hall</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Hall effect</s0>
<s5>07</s5>
</fC03>
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<s5>08</s5>
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<s5>08</s5>
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<s5>09</s5>
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<s5>09</s5>
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<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Electrical conductivity</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Barrière potentiel</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Potential barrier</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Joint grain</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Grain boundaries</s0>
<s5>12</s5>
</fC03>
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<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Crystal defects</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Charge espace</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Space charge</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Piégeage porteur charge</s0>
<s5>29</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Charge carrier trapping</s0>
<s5>29</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Captura portador carga</s0>
<s5>29</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Diffraction RX</s0>
<s5>30</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>XRD</s0>
<s5>30</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Structure cristalline</s0>
<s5>31</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Crystal structure</s0>
<s5>31</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Silicium</s0>
<s2>NC</s2>
<s5>32</s5>
</fC03>
<fC03 i1="18" i2="3" l="ENG"><s0>Silicon</s0>
<s2>NC</s2>
<s5>32</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Carbone</s0>
<s2>NC</s2>
<s5>33</s5>
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<fC03 i1="19" i2="3" l="ENG"><s0>Carbon</s0>
<s2>NC</s2>
<s5>33</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>Chlore</s0>
<s2>NC</s2>
<s5>34</s5>
</fC03>
<fC03 i1="20" i2="3" l="ENG"><s0>Chlorine</s0>
<s2>NC</s2>
<s5>34</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>Profil profondeur</s0>
<s5>35</s5>
</fC03>
<fC03 i1="21" i2="3" l="ENG"><s0>Depth profiles</s0>
<s5>35</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>Diffusion(transport)</s0>
<s5>36</s5>
</fC03>
<fC03 i1="22" i2="3" l="ENG"><s0>Diffusion</s0>
<s5>36</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>Adsorption</s0>
<s5>37</s5>
</fC03>
<fC03 i1="23" i2="3" l="ENG"><s0>Adsorption</s0>
<s5>37</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>Chlorure</s0>
<s2>NA</s2>
<s5>38</s5>
</fC03>
<fC03 i1="24" i2="3" l="ENG"><s0>Chlorides</s0>
<s2>NA</s2>
<s5>38</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>Sulfure</s0>
<s2>NA</s2>
<s5>39</s5>
</fC03>
<fC03 i1="25" i2="3" l="ENG"><s0>Sulfides</s0>
<s2>NA</s2>
<s5>39</s5>
</fC03>
<fC03 i1="26" i2="3" l="FRE"><s0>Cuivre</s0>
<s2>NC</s2>
<s5>40</s5>
</fC03>
<fC03 i1="26" i2="3" l="ENG"><s0>Copper</s0>
<s2>NC</s2>
<s5>40</s5>
</fC03>
<fC03 i1="27" i2="3" l="FRE"><s0>Indium</s0>
<s2>NC</s2>
<s5>41</s5>
</fC03>
<fC03 i1="27" i2="3" l="ENG"><s0>Indium</s0>
<s2>NC</s2>
<s5>41</s5>
</fC03>
<fC03 i1="28" i2="3" l="FRE"><s0>Gallium</s0>
<s2>NC</s2>
<s5>42</s5>
</fC03>
<fC03 i1="28" i2="3" l="ENG"><s0>Gallium</s0>
<s2>NC</s2>
<s5>42</s5>
</fC03>
<fC03 i1="29" i2="3" l="FRE"><s0>Séléniure</s0>
<s2>NA</s2>
<s5>43</s5>
</fC03>
<fC03 i1="29" i2="3" l="ENG"><s0>Selenides</s0>
<s2>NA</s2>
<s5>43</s5>
</fC03>
<fC03 i1="30" i2="3" l="FRE"><s0>Zinc</s0>
<s2>NC</s2>
<s5>44</s5>
</fC03>
<fC03 i1="30" i2="3" l="ENG"><s0>Zinc</s0>
<s2>NC</s2>
<s5>44</s5>
</fC03>
<fC03 i1="31" i2="3" l="FRE"><s0>Hydroxyde</s0>
<s2>NA</s2>
<s5>45</s5>
</fC03>
<fC03 i1="31" i2="3" l="ENG"><s0>Hydroxides</s0>
<s2>NA</s2>
<s5>45</s5>
</fC03>
<fC03 i1="32" i2="3" l="FRE"><s0>Al2O3</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="33" i2="3" l="FRE"><s0>ZnO</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="34" i2="3" l="FRE"><s0>Substrat Aluminium</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="35" i2="3" l="FRE"><s0>Substrat verre</s0>
<s4>INC</s4>
<s5>49</s5>
</fC03>
<fC03 i1="36" i2="3" l="FRE"><s0>8115C</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="37" i2="3" l="FRE"><s0>8460J</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="38" i2="3" l="FRE"><s0>7350J</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="39" i2="3" l="FRE"><s0>7361</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>118</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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   |texte=   Physical and chemical degradation behavior of sputtered aluminum doped zinc oxide layers for Cu(In,Ga)Se2 solar cells
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Physical and chemical degradation behavior of sputtered aluminum doped zinc oxide layers for Cu(In,Ga)Se2 solar cells

Physical and chemical degradation behavior of sputtered aluminum doped zinc oxide layers for Cu(In,Ga)Se2 solar cells

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